One of the hurdles of TLC NAND and VNAND is an inherently lower count of program / erase (P/E) cycles that the SSD can endure. This is the nature of packing more voltage levels into a cell to accommodate for the extra bits each cell can hold (yielding our higher capacity and lower cost). More voltage levels means more granularity required when attempting to read/write data, and the NAND loses its ability to accurately perform those reads / writes as it ages. Controllers have to step in to ensure longer life when using TLC NAND.

smi-2256

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