China’s National Development and Reform Commission (NDRC) is looking into the possibility of DRAM price-fixing between the major memory and Flash suppliers, with specific interest from the Pricing Supervision Department of said commission. An official from the regulatory body, Xu Xinyu of NDRC, stated the following: “We have noticed the price surge and will pay more attention to future problems that may be caused by ‘price fixing’ in the sector.”
This comes following recent reports that Samsung initiated plans to increase supply by 20%, which still failed to meet rising demand. The NDRC told the China Daily, a state-run media outlet, that the NDRC has paid attention to DRAM pricing and demand over the past 18 months, and that memory suppliers are now under the eye of the NDRC. There are only four major suppliers in the industry, and those include SK Hynix, Micron, Toshiba, and Samsung.
Toshiba just announced its QLC (Quad-Level Cell) NAND flash, something we talk about in our upcoming news video, and has further claimed that the new 96GB (768Gb) units will compete with TLC NAND in total program/erase endurance. This is Toshiba’s new 64-layer NAND that hasn’t yet made it into consumer products, but likely will make the move within the next year. Like TLC, QLC increases the count of voltage states (now 16) to increase the bits per cell, thereby increasing storage capacity per cell.
The race to invest in semiconductor technology is unabating, it would seem. SK Hynix, the world’s second largest memory chipmaker (after Samsung), has announced plans to construct a new memory semiconductor fab in Cheongju, South Korea. The company will also upgrade DRAM facilities in China, with the total outlay summing $2.6 billion. This comes after global chipmakers like Samsung, Toshiba, and TSMC have spurred investments of their own to expand production.
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